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PD - 91588A
IRG4PC30K
INSULATED GATE BIPOLAR TRANSISTOR
Features
* High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
G E
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
n-channel
Benefits
* As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT * Latest generation 4 IGBTs offer highest power density motor controls possible * This part replaces the IRGPC30K and IRGPC30M devices
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 28 16 58 58 10 20 260 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V A
s V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
--- 0.24 --- 6 (0.21)
Max.
1.2 --- 40 ---
Units
C/W g (oz)
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4/15/2000
IRG4PC30K
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A ,V(BR)CES/,TJ Temperature Coeff. of Breakdown Voltage -- 0.54 -- V/C VGE = 0V, IC = 1.0mA -- 2.21 -- IC = 14A -- 2.21 2.7 IC = 16A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage V -- 2.88 -- IC = 28A See Fig.2, 5 -- 2.36 -- IC = 16A , TJ = 150C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A ,VGE(th)/,TJ Temperature Coeff. of Threshold Voltage -- -12 -- mV/C VCE = VGE, IC = 250A gfe Forward Transconductance U 5.4 8.1 -- S VCE = 100V, IC = 16A -- -- 250 VGE = 0V, VCE = 600V V(BR)CES V(BR)ECS ICES IGES Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current -- -- -- -- -- -- 2.0 1100 100 A nA VGE = 0V, VCE = 10V, TJ = 25C VGE = 0V, VCE = 600V, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 67 100 IC = 16A 11 16 nC VCC = 400V See Fig.8 25 37 VGE = 15V 26 -- 28 -- TJ = 25C ns 130 200 IC = 16A, VCC = 480V 120 170 VGE = 15V, RG = 23 0.36 -- Energy losses include "tail" 0.51 -- mJ See Fig. 9,10,14 0.87 1.3 -- -- s VCC = 400V, TJ = 125C VGE = 15V, RG = 23 , VCPK < 500V 25 -- TJ = 150C, 29 -- IC = 16A, VCC = 480V ns 190 -- VGE = 15V, RG = 23 190 -- Energy losses include "tail" 1.2 -- mJ See Fig. 11,14 0.26 -- TJ = 25C, VGE = 15V, RG = 23 0.36 -- IC = 14A, VCC = 480V 0.62 -- Energy losses include "tail" 13 -- nH Measured 5mm from package 920 -- VGE = 0V 110 -- pF VCC = 30V See Fig. 7 27 -- = 1.0MHz
Details of note Q through U are on the last page
2
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IRG4PC30K
40 F o r b o th : 35
T ria n g u la r w a ve :
I
Load Current ( A )
30
D uty c yc le: 50% T J = 125C T s ink = 90C G ate driv e as spec ified
P o w e r D is si p a tio n = 2 4 W
C la m p vo l ta g e : 8 0 % o f ra te d
25 S q u a re wave : 20 6 0 % o f ra te d vo l ta g e
1
15
10 Id e a l d io de s 5
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 150 o C
10
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
TJ = 25 o C
TJ = 150 o C
10
TJ = 25 o C
1
1
0.1 1
V GE = 15V 20s PULSE WIDTH
10
0.1 5 10
V CC = 50V 5s PULSE WIDTH
15
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4PC30K
30 4.0
VGE = 15V 80 us PULSE WIDTH
Maximum DC Collector Current(A)
25
VCE , Collector-to-Emitter Voltage(V)
I C = 32 A
20
3.0
15
I C = 16 A
2.0
10
I C = 8.0A 8A
5
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
, Junction Temperature ( ) C) TTJ Junction Temperature ( C J,
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4PC30K
1500
1200
VGE , Gate-to-Emitter Voltage (V)
100
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 16A
16
C, Capacitance (pF)
900
Cies
12
600
8
300
Coes Cres
4
0 1 10
0 0 20 40 60 80
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 16A
10
RG = Ohm 23 VGE = 15V VCC = 480V
IC = 32 A
IC = 16 A
1
1.0
IC = 8.0A 8A
0.5 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4PC30K
4.0
2.4
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC 3.2 VGE
= 23 Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 oC
10
1.6
0.8
SAFE OPERATING AREA
0.0 0 8 16 24 32 40 1 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
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IRG4PC30K
L 50V 1 00 0V VC *
0 - 480V
D .U .T.
RL = 480V 4 X I C@25C
480F 960V R
Q
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S
* Driver same type as D.U.T., VC = 480V
D .U .T. VC
Fig. 14a - Switching Loss
Test Circuit
Q
R
90 %
S
10 % 90 %
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
1 0% IC 5% t d (o n )
tr Eon E ts = (E o n +E o ff )
tf t=5 s E o ff
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IRG4PC30K
Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot.
Case Outline and Dimensions -- TO-247AC
3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7)
-D-
1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-
5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4
N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C .
2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1
2X
5 .5 0 (.2 17 ) 4 .5 0 (.1 77 )
2
3
-C-
LEAD 1234-
A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R
*
14 .80 (.583 ) 14 .20 (.559 )
4.30 (.1 70) 3.70 (.1 45)
0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 )
*
2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5.45 (.2 15 )
L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER
3X
1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M
C AS
2X
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n s ion s in M illim e te rs a n d (In c h es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00
8
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